ESD5304D 4-lines, uni-directional, ultra-low capacitance transient voltage suppressors descriptions the ESD5304D is an ultra-low capacitance tvs (transient voltage suppressor) array designed to protect high speed data interfaces. it has been specifically designed to protect sensitive electronic components which are connected to data and transmission lines from over-stress caused by esd (electrostatic discharge). the ESD5304D incorporates four pairs of ultra- low capacitance steering diodes plus a tvs diode. the ESD5304D may be used to provide esd protection up to 20kv (contact discharge) according to iec61000-4-2, and withstand peak pulse current up to 4a (8/20 s) according to iec61000-4-5. the ESD5304D is available in dfn2510-10l package. standard products are pb-free and halogen-free. features ? stand-off voltage: 5v max. ? transient protection for each line according to iec61000-4-2 (esd): 20kv (contact discharge) iec61000-4-4 (eft): 40a (5/50ns) iec61000-4-5 (surge): 4a (8/20 s) ? ultra-low capacitance: c j = 0.4pf typ. ? ultra-low leakage current: i r <1na typ. ? low clamping voltage: v cl = 19v typ. @ i pp = 16a (tlp) ? solid-state silicon technology applications ? usb 2.0 and usb 3.0 ? hdmi 1.3 and hdmi 1.4 ? sata and esata ? dvi ? ieee 1394 ? pci express ? portable electronics and notebooks dfn2510-10l (bottom view) pin configuration (top view) 5v4 = device code * = month code ( a~z) marking order information device package shipping ESD5304D-10/tr dfn2510-10l 3000/tape&reel 12345 6 7 8 9 10 i/o1 i/o2 i/o3 i/o4 gnd gnd nc nc nc nc 15 6 10 5v4 * 12 45 3, 8 1 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings electrical characteristics (t a = 25 o c, unless otherwise noted) notes: 1) tlp parameter: z 0 = 50 ? , t p = 100ns, t r = 2ns, averaging window from 60ns to 80ns. r dyn is calculated from 4a to 16a. 2) non-repetitive current pulse, according to iec61000-4-5. parameter symbol rating unit peak pulse power (t p = 8/20 s) p pk 60 w peak pulse current (t p = 8/20 s) i pp 4 a esd according to iec61000-4-2 air discharge v esd 20 kv esd according to iec61000-4-2 contact discharge 20 operation junction temperature t j 125 o c lead temperature t l 260 o c storage temperature t stg -55~150 o c parameter symbol condition min. typ. max. unit reverse maximum working voltage v rwm 5.0 v reverse leakage current i r v rwm = 5v <1 100 na reverse breakdown voltage v br i t = 1ma 7.0 8.0 9.0 v forward voltage v f i t = 10ma 0.6 0.9 1.2 v clamping voltage 1) v cl i pp = 16a, t p = 100ns 19.0 v dynamic resistance 1) r dyn 0.65 ? clamping voltage 2) v cl i pp = 1a, t p = 8/20 s 11 v i pp = 4a, t p = 8/20 s 15 v junction capacitance c j v r = 0v, f = 1mhz any i/o pin to gnd 0.40 0.65 pf v r = 0v, f = 1mhz between any i/o pin 0.25 0.40 pf ESD5304D 2 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (t a = 25 o c, unless otherwise noted) 8/20 s waveform per iec61000-4-5 clamping voltage vs. peak pulse current non-repetitive peak pulse power vs. pulse time contact discharge current waveform per iec61000-4-2 capacitance vs. reveres voltage power derating vs. ambient temperature 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse time ( ? s) 0 255075100125150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) 012345 8 10 12 14 pulse waveform: t p = 8/20 ? s v c - clamping voltage (v) i pp - peak pulse current (a) t 60ns 30ns t r = 0.7~1ns 10 90 100 current (%) time (ns) 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100 110 t 2 t 1 front time: t 1 = 1.25 ?? t = 8 ? s time to half-value: t 2 = 20 ? s peak pulse current (%) time ( ? s) t 012345 0.20 0.25 0.30 0.35 0.40 0.45 0.50 between any i/o pin any i/o pin to gnd f = 1mhz c j - junction capacitance (pf) v r - reverse voltage (v) ESD5304D 3 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (t a = 25 o c, unless otherwise noted) esd clamping (+8kv contact discharge per iec61000-4-2) tlp measurement esd clamping (-8kv contact discharge per iec61000-4-2) 0 2 4 6 8 10121416182022 -2 0 2 4 6 8 10 12 14 16 18 20 z 0 = 50 ? t r = 2ns t p = 100ns tlp current (a) tlp voltage (v) ESD5304D 4 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions dfn2510-10l top view bottom view side view symbol dimensions in millimeter min. typ. max. a 0.550 0.600 0.650 a1 0.000 - 0.050 a3 0.150 ref. d 2.424 2.500 2.576 e 0.924 1.000 1.076 d1 0.300 0.400 0.500 e1 0.410 0.510 0.610 b 0.150 0.200 0.250 e 0.500 typ. l 0.304 0.380 0.456 recommend land pattern (unit: mm) 0.60 0.60 0.20 notes: this recommended land pattern is for reference purposes only. please consult your manufacturing group to ensure your pcb design guidelines are met. ESD5304D 5 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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